1. product profile 1.1 general description the devices are common-mode electromagnetic in terference (emi) filters with integrated electrostatic discharge (esd) protection for two and three differential channels. the devices are designed to provide low insertion loss for differential high-speed signals on each channel while unwanted commo n-mode signals are attenuated. each differential channel incorporates two sign al lines that are coupled by integrated coils. diodes provide protection to downstream components from esd voltages up to ? 15 kv on each signal line. 1.2 features and benefits 1.3 applications PCMF2DFN1; pcmf3dfn1 common-mode emi filter for differential channels with integrated esd protection rev. 2 ? 28 april 2014 product data sheet table 1. product overview type number number of channels package name version PCMF2DFN1 2 dfn2520-9 sot1333-1 xson9 pcmf3dfn1 3 dfn4020-14 sot1334-1 xson14 ? two and three differential channels common-mode emi filter with integrated esd protection ? esd protection up to ? 15 kv contact discharge according to iec 61000-4-2 ? superior common-mode suppression over a wide frequency range ? maximum package height: 0.5 mm ? smartphone, cellular and cordless phone ? tablet pc and mobile internet device (mid) ? mipi d-phy as used in camera serial interface (csi) and display serial interface (dsi) ? high-definition mult imedia interface (hdmi) ? general-purpose emi and radio-frequency interference (rfi) filter and downstream esd protection
PCMF2DFN1_pcmf3dfn1 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. al l rights reserved. product data sheet rev. 2 ? 28 april 2014 2 of 14 nxp semiconductors PCMF2DFN1; pcmf3dfn1 common-mode emi filter for differential channels with esd protection 2. pinning information table 2. pinning pin symbol description simplified outline graphic symbol PCMF2DFN1 (sot1333-1) 1 ch1_in+ input channel 1 dfn2520-9 2 ch1_in ? input channel 1 3 gnd ground 4 ch2_in+ input channel 2 5 ch2_in ? input channel 2 6 ch2_out ? output channel 2 7 ch2_out+ output channel 2 8 ch1_out ? output channel 1 9 ch1_out+ output channel 1 pcmf3dfn1 (sot1334-1) 1 ch1_in+ input channel 1 dfn4020-14 2 ch1_in ? input channel 1 3 gnd_1 ground 1 4 ch2_in+ input channel 2 5 ch2_in ? input channel 2 6 gnd_2 ground 2 7 ch3_in+ input channel 3 8 ch3_in ? input channel 3 9 ch3_out ? output channel 3 10 ch3_out+ output channel 3 11 ch2_out ? output channel 2 12 ch2_out+ output channel 2 13 ch1_out ? output channel 1 14 ch1_out+ output channel 1 transparent top view 1 2 3 4 5 9 8 7 6 1 2 9 8 4 5 7 6 aaa-007385 3 transparent top view 1 2 3 4 5 6 7 8 9 10 11 12 13 14 4 5 12 11 7 8 10 9 aaa-007384 6 14 13 1 2 3
PCMF2DFN1_pcmf3dfn1 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. al l rights reserved. product data sheet rev. 2 ? 28 april 2014 3 of 14 nxp semiconductors PCMF2DFN1; pcmf3dfn1 common-mode emi filter for differential channels with esd protection 3. ordering information 4. marking 5. limiting values table 3. ordering information type number package name description version PCMF2DFN1 dfn2520-9 plastic extremely thin small outline package; no leads; 9 terminals; body 2 ? 2.5 ? 0.5 mm sot1333-1 pcmf3dfn1 dfn4020-14 plastic extremely thin small outline package; no leads; 14 terminals; body 2 ? 4 ? 0.5 mm sot1334-1 table 4. marking codes type number marking code PCMF2DFN1 mp1 pcmf3dfn1 cmfmp1 table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v i input voltage ? 0.5 5 v v esd electrostatic discharge voltage iec 61000-4-2, level 4; all input pins to ground contact discharge ? 15 15 kv air discharge ? 15 15 kv iec 61000-4-2, level 4; all output pins to ground contact discharge ? 22 kv air discharge ? 22 kv t stg storage temperature ? 55 +125 ?c t amb ambient temperature ? 40 +85 ?c
PCMF2DFN1_pcmf3dfn1 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. al l rights reserved. product data sheet rev. 2 ? 28 april 2014 4 of 14 nxp semiconductors PCMF2DFN1; pcmf3dfn1 common-mode emi filter for differential channels with esd protection 6. characteristics 6.1 channel characteristics [1] this parameter is guaranteed by design. [2] 100 ns transmission line pulse (tlp); 50 ? ; pulser at 70 to 90 ns. [3] according to iec 61000-4-5 (8/20 ? s). table 6. channel characteristics t amb =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit r s(ch) channel series resistance single line; input to output - 5 - ? c d diode capacitance f = 1 mhz; v i = 2.5 v [1] - 0.6 0.75 pf i rm reverse leakage current per line; v i = 5 v - - 100 na v br breakdown voltage i r =10ma 6 - 9 v v f forward voltage i f = 10 ma 0.6 - 1.1 v r dyn dynamic resistance tlp [2] positive transient - 0.6 - ? negative transient - 0.6 - ? surge [3] positive transient - 0.6 - ? negative transient - 0.6 - ? v cl clamping voltage positive transient; i pp =4a [3] -4.8-v negative transient; i pp = ? 5a [3] - ? 3.6 - v tlp; i cl =8a - 8 - v tlp; i cl = 12 a - 10.5 - v tlp; i cl = 16 a - 13.4 - v tlp; i cl = ? 8a - ? 6- v tlp; i cl = ? 12 a - ? 8.4 - v tlp; i cl = ? 16 a - ? 10.7 - v
PCMF2DFN1_pcmf3dfn1 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. al l rights reserved. product data sheet rev. 2 ? 28 april 2014 5 of 14 nxp semiconductors PCMF2DFN1; pcmf3dfn1 common-mode emi filter for differential channels with esd protection the device uses an advanced cl amping structure showing a negative dynamic resistance. this snap-back behavior strongly reduces the clamping voltage to the system behind the esd protection during an esd event. do not connect unlimited dc current sources to the data lines to avoid keeping the esd protection device in snap-back state after exceeding breakdown voltage (due to an esd pulse for instance). iec 61000-4-5; t p =8/20 ? s; positive pulse iec 61000-4-5; t p =8/20 ? s; negative pulse fig 1. dynamic resistance with positive clamping; typical values fig 2. dynamic resistance with negative clamping; typical values t p = 100 ns; transmission line pulse (tlp) t p = 100 ns; transmission line pulse (tlp) fig 3. dynamic resistance with positive clamping; typical values fig 4. dynamic resistance with negative clamping; typical values v cl (v) 3.0 5.5 5.0 4.0 4.5 3.5 aaa-007659 3 2 4 5 i cl (a) 1 v cl (v) -5 -1 -2 -4 -3 aaa-007660 -5 -3 -1 i cl (a) -7 d d d 9 & |